The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 04, 2025

Filed:

Aug. 30, 2023
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Daniel Chanemougame, Niskayuna, NY (US);

Lars Liebmann, Mechanicsville, NY (US);

Jeffrey Smith, Clifton Park, NY (US);

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/538 (2006.01); H01L 21/48 (2006.01); H01L 27/092 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5383 (2013.01); H01L 21/4885 (2013.01); H01L 27/0924 (2013.01);
Abstract

An additional set of interconnects is created in bulk material, allowing connections to active devices to be made from both above and below. The interconnects below the active devices can form a power distribution network, and the interconnects above the active devices can form a signaling network. Various accommodations can be made to suit different applications, such as encapsulating buried elements, using sacrificial material, and replacing the bulk material with a dielectric. Epitaxial material can be used throughout the formation process, allowing for the creation of a monolithic substrate.


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