The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 04, 2025
Filed:
Jan. 29, 2024
Micron Technology, Inc., Boise, ID (US);
Murong Lang, San Jose, CA (US);
Zhenming Zhou, San Jose, CA (US);
Jian Huang, Union City, CA (US);
Tingjun Xie, Milpitas, CA (US);
Jiangli Zhu, San Jose, CA (US);
Nagendra Prasad Ganesh Rao, Folsom, CA (US);
Sead Zildzic, Folsom, CA (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
A difference between a recorded time stamp for a first set of memory cells comprised by an open translation unit (TU) of memory cells and a current time stamp for the open TU is determined, wherein the first set of memory cells comprises a most recently programmed set of memory cells. It is determined, based on a current temperature for the open TU and the difference between the recorded time stamp and the current time stamp, that a second set of memory cells comprised by the open TU is in a coarse programming state. A programming operation is performed on the second set of memory cells using a reduced programming state verify level and a reduced programming state gate step size associated with the second set of memory cells.