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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12211838 B1

PDFFull Text
Date of Patent:
Jan. 28, 2025

Filed:

Aug. 10, 2023

Device including mim capacitor and resistor

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Inventors:

Chen-Hsiang Hung, Hsin-Chu, TW;

Li-Hsin Chu, New Taipei, TW;

Chia-Ping Lai, Hsinchu, TW;

Chung-Chuan Tseng, Hsinchu, TW;

Assignee:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Attorney:

Duane Morris LLP

Primary Examiner:

Raj R Gupta

Int. Cl.
CPC ...
H01L 27/07 (2006.01); H01L 23/532 (2006.01); H01L 27/01 (2006.01); H01L 27/06 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0794 (2013.01); H01L 23/5329 (2013.01); H01L 27/016 (2013.01); H01L 27/0682 (2013.01); H01L 28/20 (2013.01); H01L 28/60 (2013.01);
Abstract

A method of making a semiconductor device, includes: providing a first dielectric layer; sequentially forming a first metal layer, a dummy capacitor dielectric layer, and a second metal layer over the first dielectric layer; and using a single mask layer with two patterns to simultaneously recess two portions of the second metal layer so as to define a metal thin film of a resistor and a top metal plate of a capacitor.

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Hung, Chen-Hsiang. (2025). Device including mim capacitor and resistor (U.S. Patent No. 12211838). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12211838

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