The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 28, 2025
Filed:
Jan. 24, 2024
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Sai-Hooi Yeong, Zhubei, TW;
Bo-Feng Young, Taipei, TW;
Chi-On Chui, Hsinchu, TW;
Chih-Chieh Yeh, Taipei, TW;
Cheng-Hsien Wu, Hsinchu, TW;
Chih-Sheng Chang, Hsinchu, TW;
Tzu-Chiang Chen, Hsinchu, TW;
I-Sheng Chen, Taipei, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A semiconductor device includes a first set of nanostructures stacked over a substrate in a vertical direction, and each of the first set of nanostructures includes a first end portion and a second end portion, and a first middle portion laterally between the first end portion and the second end portion. The first end portion and the second end portion are thicker than the first middle portion. The semiconductor device also includes a first plurality of semiconductor capping layers around the first middle portions of the first set of nanostructures, and a gate structure around the first plurality of semiconductor capping layers.