The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 28, 2025

Filed:

Nov. 07, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;

Inventors:

Meng-Sheng Chang, Hsinchu, TW;

Chia-En Huang, Hsinchu, TW;

Shao-Yu Chou, Hsinchu, TW;

Yih Wang, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 17/00 (2006.01); G11C 17/16 (2006.01); G11C 17/18 (2006.01); H01L 23/525 (2006.01); H01L 23/528 (2006.01); H10B 20/25 (2023.01);
U.S. Cl.
CPC ...
G11C 17/16 (2013.01); G11C 17/18 (2013.01); H01L 23/5256 (2013.01); H01L 23/528 (2013.01); H10B 20/25 (2023.02);
Abstract

A multi-fuse memory cell is disclosed. The circuit includes: a first fuse element electrically coupled to a first transistor, a gate of the first transistor is electrically coupled to a first selection signal; a second fuse element electrically coupled to a second transistor, a gate of the second transistor is electrically coupled to a second selection signal, both the first transistor and the second transistor are grounded; and a programming transistor electrically coupled to the first fuse element and the second fuse element, wherein a gate of the programming transistor is electrically coupled to a programming signal.


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