The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 21, 2025
Filed:
Apr. 20, 2023
Applicant:
Winbond Electronics Corp., Taichung, TW;
Inventors:
Shu-Ming Lee, Taichung, TW;
Yung-Han Chiu, Taichung, TW;
Chia-Hung Liu, Taichung, TW;
Tzu-Ming Ou Yang, Tainan, TW;
Assignee:
WINBOND ELECTRONICS CORP., Taichung, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/76 (2006.01); H01L 21/28 (2006.01); H01L 21/3065 (2006.01); H01L 21/308 (2006.01); H01L 21/311 (2006.01); H01L 21/762 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/788 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66545 (2013.01); H01L 21/28114 (2013.01); H01L 21/3065 (2013.01); H01L 21/3081 (2013.01); H01L 21/3086 (2013.01); H01L 21/31116 (2013.01); H01L 21/76224 (2013.01); H01L 29/40114 (2019.08); H01L 29/42376 (2013.01); H01L 29/66825 (2013.01); H01L 29/788 (2013.01);
Abstract
A method for forming a semiconductor structure includes providing a semiconductor substrate, forming a sacrificial layer over the semiconductor substrate, etching the sacrificial layer to form a sacrificial pattern, etching the semiconductor substrate using the sacrificial pattern as an etching mask to form an active region of the semiconductor substrate, trimming the sacrificial pattern, and replacing the trimmed sacrificial pattern with a gate electrode.