The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 21, 2025
Filed:
Oct. 11, 2021
Applicants:
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Semiconductor Manufacturing International (Beijing) Corporation, Beijing, CN;
Inventor:
Changzhou Wang, Shanghai, CN;
Assignees:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/08 (2006.01); H01L 21/02 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 28/75 (2013.01); H01L 21/02194 (2013.01); H01L 21/0228 (2013.01); H01L 27/0805 (2013.01); H01L 28/65 (2013.01);
Abstract
A capacitor structure and a forming method thereof are provided. The capacitor structure includes a substrate and a bottom electrode composite layer on the substrate. The bottom electrode composite layer includes a first electrode layer and a second electrode layer on the first electrode layer. An oxidation rate of a material of the second electrode layer is lower than an oxidation rate of a material of the first electrode layer. The capacitor structure also includes a dielectric structure layer on the bottom electrode composite layer.