The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 21, 2025

Filed:

Dec. 20, 2021
Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Chuan Cheah, Torrance, CA (US);

Josef Hoeglauer, Heimstetten, DE;

Tobias Polster, Villach, AT;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/78 (2006.01); H01L 21/56 (2006.01); H01L 23/00 (2006.01); H01L 23/373 (2006.01); H01L 23/538 (2006.01); H01L 25/00 (2006.01); H01L 25/07 (2006.01); H01L 29/40 (2006.01); H01L 29/45 (2006.01);
U.S. Cl.
CPC ...
H01L 24/24 (2013.01); H01L 21/568 (2013.01); H01L 21/78 (2013.01); H01L 23/5389 (2013.01); H01L 24/82 (2013.01); H01L 25/072 (2013.01); H01L 25/50 (2013.01); H01L 29/401 (2013.01); H01L 23/3736 (2013.01); H01L 29/45 (2013.01); H01L 2224/24137 (2013.01); H01L 2224/24155 (2013.01); H01L 2224/82106 (2013.01);
Abstract

A method of processing a semiconductor wafer includes: forming an electronic device at each die location of the semiconductor wafer; partially forming a frontside metallization over a frontside of the semiconductor wafer at each die location; partially forming a backside metallization over a backside of the semiconductor wafer at each die location; and after partially forming both the frontside metallization and the backside metallization but without completing either the frontside metallization or the backside metallization, singulating the semiconductor wafer between the die locations to form a plurality of individual semiconductor dies, wherein the partially formed frontside metallization and the partially formed backside metallization have a same composition. Semiconductor dies and methods of producing semiconductor modules are also described.


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