The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 21, 2025

Filed:

Aug. 10, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Chih-Liang Chen, Hsinchu, TW;

Guo-Huei Wu, Hsinchu, TW;

Li-Chun Tien, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/528 (2006.01); G06F 30/392 (2020.01); G06F 30/3953 (2020.01); G06F 119/06 (2020.01);
U.S. Cl.
CPC ...
H01L 23/5286 (2013.01); G06F 30/392 (2020.01); G06F 30/3953 (2020.01); G06F 2119/06 (2020.01);
Abstract

A semiconductor device includes a semiconductor substrate with active regions and a first buried metal layer provided below the semiconductor substrate. The first buried metal layer includes a first buried conductive rail, a first set of buried conductive fingers that extends from the first buried conductive rail, and a second set of buried conductive fingers that are interleaved with the first set of buried conductive fingers. The first set and the second set of buried conductive fingers extends beneath more than one of the active regions. In this manner, the first set and the second set of buried conductive fingers can be utilized to distribute different voltages, such as an ungated reference voltage TVDD and a gated reference voltage VVDD in a header circuit with reduced resistance.


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