The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 21, 2025
Filed:
Feb. 09, 2023
Applicant:
United Semiconductor (Xiamen) Co., Ltd., Fujian, CN;
Inventors:
Ching-Shu Lo, Singapore, SG;
Yuan-Chi Pai, Fujian, CN;
Maohua Ren, Fujian, CN;
Wen Yi Tan, Fujian, CN;
Assignee:
United Semiconductor (Xiamen) Co., Ltd., Fujian, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/20 (2006.01); G03F 7/00 (2006.01);
U.S. Cl.
CPC ...
G03F 7/2041 (2013.01); G03F 7/0035 (2013.01); G03F 7/2004 (2013.01); G03F 7/70308 (2013.01);
Abstract
A lithography film stack applied to an immersion lithography process includes a photoresist, a wavelength adjusting layer and a top coating layer. The photoresist is disposed on a substrate. The wavelength adjusting layer is disposed on the photoresist. The top coating layer is disposed on the wavelength adjusting layer. A refractive index of the wavelength adjusting layer is greater than a refractive index of the top coating layer and a refractive index of an immersion fluid of the immersion lithography process.