The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 21, 2025
Filed:
Oct. 31, 2022
Applicant:
Globalwafers Co., Ltd., Hsinchu, TW;
Inventor:
Hsiu Chi Liang, Hsinchu, TW;
Assignee:
GlobalWafers Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N 21/95 (2006.01); G01M 1/12 (2006.01);
U.S. Cl.
CPC ...
G01N 21/9501 (2013.01); G01M 1/122 (2013.01);
Abstract
An ingot evaluation method and a detecting apparatus are provided. Defect information of a wafer is obtained from an ingot. The defect information includes a position of at least one defect identified by optical detection. A center-of-gravity position of the defect is determined according to the defect information. Uniformity of the defect is evaluated according to the center-of-gravity position. The uniformity is related to quality of a processed wafer.
Liang, Hsiu. (2025). Ingot evaluation method and detecting apparatus (U.S. Patent No. 12203871). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12203871
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile