The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 14, 2025
Filed:
Feb. 08, 2022
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Meng-Han Chou, Hsinchu, TW;
Yi-Syuan Siao, Changhua, TW;
Su-Hao Liu, Jhongpu Township, TW;
Huicheng Chang, Tainan, TW;
Yee-Chia Yeo, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A method includes forming a source/drain region, forming a dielectric layer over the source/drain region, and etching the dielectric layer to form a contact opening. The source/drain region is exposed to the contact opening. The method further includes depositing a dielectric spacer layer extending into the contact opening, etching the dielectric spacer layer to form a contact spacer in the contact opening, implanting a dopant into the source/drain region through the contact opening after the dielectric spacer layer is deposited, and forming a contact plug to fill the contact opening.