The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 14, 2025

Filed:

Oct. 31, 2023
Applicant:

Adeia Semiconductor Technologies Llc, San Jose, CA (US);

Inventors:

Min Tao, San Jose, CA (US);

Liang Wang, Milpitas, CA (US);

Rajesh Katkar, Milpitas, CA (US);

Cyprian Emeka Uzoh, San Jose, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/18 (2006.01); H01L 21/02 (2006.01); H01L 21/321 (2006.01); H01L 23/00 (2006.01); H01L 25/10 (2006.01); H01L 25/16 (2023.01); H01L 25/18 (2023.01); H01L 27/12 (2006.01); H01L 27/15 (2006.01); H01L 33/00 (2010.01); H01L 33/06 (2010.01); H01L 33/32 (2010.01); H01L 33/44 (2010.01); H01L 33/46 (2010.01); H01L 33/62 (2010.01);
U.S. Cl.
CPC ...
H01L 25/167 (2013.01); H01L 21/02118 (2013.01); H01L 21/3212 (2013.01); H01L 24/08 (2013.01); H01L 24/80 (2013.01); H01L 25/105 (2013.01); H01L 25/18 (2013.01); H01L 27/1214 (2013.01); H01L 27/156 (2013.01); H01L 33/007 (2013.01); H01L 33/0093 (2020.05); H01L 33/06 (2013.01); H01L 33/32 (2013.01); H01L 33/44 (2013.01); H01L 33/46 (2013.01); H01L 33/62 (2013.01); H01L 2224/08145 (2013.01); H01L 2224/80013 (2013.01); H01L 2224/80355 (2013.01); H01L 2224/80357 (2013.01); H01L 2933/0016 (2013.01); H01L 2933/0025 (2013.01); H01L 2933/0066 (2013.01);
Abstract

Direct-bonded LED arrays and applications are provided. An example process fabricates a LED structure that includes coplanar electrical contacts for p-type and n-type semiconductors of the LED structure on a flat bonding interface surface of the LED structure. The coplanar electrical contacts of the flat bonding interface surface are direct-bonded to electrical contacts of a driver circuit for the LED structure. In a wafer-level process, micro-LED structures are fabricated on a first wafer, including coplanar electrical contacts for p-type and n-type semiconductors of the LED structures on the flat bonding interface surfaces of the wafer. At least the coplanar electrical contacts of the flat bonding interface are direct-bonded to electrical contacts of CMOS driver circuits on a second wafer. The process provides a transparent and flexible micro-LED array display, with each micro-LED structure having an illumination area approximately the size of a pixel or a smallest controllable element of an image represented on a high-resolution video display.


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