The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 14, 2025
Filed:
Jan. 12, 2022
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Cheng-Feng Wu, Hsinchu, TW;
Chih-Jen Yu, Hsinchu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); G03F 7/16 (2006.01);
U.S. Cl.
CPC ...
H01L 24/03 (2013.01); G03F 7/162 (2013.01); H01L 24/02 (2013.01); H01L 24/05 (2013.01); H01L 24/13 (2013.01); H01L 2224/02206 (2013.01); H01L 2224/0221 (2013.01); H01L 2224/02215 (2013.01); H01L 2224/0233 (2013.01); H01L 2224/0239 (2013.01); H01L 2224/03019 (2013.01); H01L 2224/0382 (2013.01); H01L 2224/05548 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/13147 (2013.01);
Abstract
A semiconductor device comprises a metallization layer, a passivation layer disposed above the metallization layer, a copper redistribution layer disposed on the passivation layer, a second passivation layer disposed on the copper redistribution layer, and a polyimide layer disposed over the second passivation layer. The polyimide layer and the second passivation layer include a continuous gap there-through that exposes a portion of the copper redistribution layer.