The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 14, 2025
Filed:
Oct. 29, 2021
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Koki Chino, Miyagi, JP;
Hikoichiro Sasaki, Miyagi, JP;
Assignee:
TOKYO ELECTRON LIMITED, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01J 37/32 (2006.01); H01L 21/3065 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31116 (2013.01); H01J 37/32449 (2013.01); H01L 21/3065 (2013.01); H01J 2237/334 (2013.01);
Abstract
An etching method includes: (a) preparing a substrate including a silicon-containing film including a silicon oxide film and placed on a substrate support provided in a chamber; (b) supplying a processing gas containing a tungsten hexafluoride gas, a gas containing carbon and fluorine, and an oxygen-containing gas into the chamber; and (c) generating plasma from the processing gas to etch the silicon-containing film. (c) includes periodically applying a negative DC voltage to the substrate support.