The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 14, 2025

Filed:

Dec. 22, 2022
Applicant:

Jx Advanced Metals Corporation, Tokyo, JP;

Inventors:

Atsushi Sato, Ibaraki, JP;

Hideo Takami, Ibaraki, JP;

Yuichiro Nakamura, Ibaraki, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/34 (2006.01); B22F 1/05 (2022.01); B22F 1/12 (2022.01); B22F 3/14 (2006.01); B22F 3/15 (2006.01); C22C 5/04 (2006.01); C22C 33/02 (2006.01); C22C 38/00 (2006.01); C23C 14/34 (2006.01); G11B 5/851 (2006.01); H01F 41/18 (2006.01);
U.S. Cl.
CPC ...
H01J 37/3429 (2013.01); C22C 5/04 (2013.01); C22C 33/02 (2013.01); C23C 14/3414 (2013.01); H01F 41/183 (2013.01); H01J 37/3491 (2013.01); B22F 1/05 (2022.01); B22F 1/12 (2022.01); B22F 3/14 (2013.01); B22F 3/15 (2013.01); B22F 2304/10 (2013.01); C22C 38/00 (2013.01); G11B 5/851 (2013.01);
Abstract

Provided is a sputtering target which can lower a heat treatment temperature for ordering a Fe—Pt magnetic phase and can suppress generation of particles during sputtering. The sputtering target is a nonmagnetic material-dispersed sputtering target containing Fe, Pt and Ge. The sputtering target includes at least one magnetic phase satisfying a composition represented by (FePt)Ge, as expressed in an atomic ratio for Fe, Pt and Ge, in which α and β represent numbers meeting 0.35≤α≤0.55 and 0.05≤β≤0.2, respectively. The magnetic phase has a ratio (S/S) of 0.5 or less. The ratio (S/S) is an average area ratio of Ge-based alloy phases containing a Ge concentration of 30% by mass or more (S) to an area ratio of Ge (S) calculated from the entire composition of the sputtering target, in element mapping by EPMA of a polished surface obtained by polishing a cross section perpendicular to a sputtering surface of the sputtering target.


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