The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 2025
Filed:
Jan. 13, 2022
Micron Technology, Inc., Boise, ID (US);
Devesh Dadhich Shreeram, Boise, ID (US);
Kangle Li, Boise, ID (US);
Matthew N. Rocklein, Boise, ID (US);
Wei Ching Huang, Central Taichung, TW;
Ping-Cheng Hsu, Tokyo, JP;
Sevim Korkmaz, Boise, ID (US);
Sanjeev Sapra, Boise, ID (US);
An-Jen B. Cheng, Boise, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
A DRAM capacitor may include a first capacitor electrode, a capacitor dielectric adjacent to the first capacitor electrode, and a second capacitor electrode adjacent to the capacitor dielectric. The first capacitor electrode may include a lower portion, an upper portion, and a step transition between the lower portion and the upper portion, a width of the upper portion of the first capacitor electrode at the step transition is less than a width of the lower portion of the first capacitor electrode at the step transition. Semiconductor devices, systems, and methods are also disclosed.