The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 2025
Filed:
May. 11, 2022
Globalfoundries U.s. Inc., Malta, NY (US);
Robert J. Gauthier, Jr., Williston, VT (US);
Rajendran Krishnasamy, Essex Junction, VT (US);
Anupam Dutta, Bangalore, IN;
Anindya Nath, Essex Junction, VT (US);
Xiangxiang Lu, Essex Junction, VT (US);
Satyasuresh Vvss Choppalli, Bangalore, IN;
Lin Lin, Houston, TX (US);
GlobalFoundries U.S. Inc., Malta, NY (US);
Abstract
Embodiments of the disclosure provide an integrated circuit (IC) structure with resistive semiconductor material for a back well. The IC structure may include a semiconductor substrate having a deep well, and a device within a first portion of the deep well. The device includes a first doped semiconductor material coupled to a first contact, and a second doped semiconductor material coupled to a second contact. The deep well couples the first doped semiconductor material to the second doped semiconductor material. A first back well is within a second portion of the deep well. A first resistive semiconductor material is within the deep well and defines a boundary between the first portion of the deep well and the second portion of the deep well.