The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 07, 2025

Filed:

Apr. 21, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Zhen Yu Guan, Changhua County, TW;

Sheng-Wen Fu, Hsinchu, TW;

Hsun-Chung Kuang, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/522 (2006.01); G11C 11/16 (2006.01); H01L 21/768 (2006.01); H01L 23/528 (2006.01); H10N 50/01 (2023.01); H10N 50/10 (2023.01); H10N 50/80 (2023.01);
U.S. Cl.
CPC ...
H01L 23/5226 (2013.01); G11C 11/161 (2013.01); H01L 21/76831 (2013.01); H01L 23/528 (2013.01); H10N 50/01 (2023.02); H10N 50/10 (2023.02); H10N 50/80 (2023.02);
Abstract

The present disclosure relates integrated chip structure. The integrated chip structure includes a lower insulating structure disposed over a lower dielectric structure surrounding one or more lower interconnects. A bottom electrode via surrounded by one or more interior sidewalls of the lower insulating structure. The bottom electrode via includes a barrier surrounding a conductive core. A bottom electrode is arranged on the bottom electrode via, a data storage structure is over the bottom electrode, and a top electrode is over the data storage structure. The barrier includes a sidewall disposed along the one or more interior sidewalls of the lower insulating structure and a horizontally covering segment protruding outward from the sidewall to above a top surface of the lower insulating structure.


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