The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 2025
Filed:
May. 25, 2022
United Semiconductor (Xiamen) Co., Ltd., Fujian, CN;
Linshan Yuan, Shamen, CN;
Guang Yang, Fujian, CN;
Yuchun Guo, Shamen, CN;
Jinjian Ouyang, Fujian, CN;
Chin-Chun Huang, Hsinchu County, TW;
Wen Yi Tan, Fujian, CN;
United Semiconductor (Xiamen) Co., Ltd., Fujian, CN;
Abstract
A method for fabricating a semiconductor device is disclosed. A substrate having thereon at least one metal-oxide-semiconductor (MOS) transistor is provided. A stress memorization technique (SMT) process is performed. The SMT process includes steps of depositing an SMT film covering the at least one MOS transistor on the substrate, and subjecting the SMT film to a thermal process. A lithographic process and an etching process are performed to form a patterned SMT film. A silicide layer is formed on the MOS transistor. The patterned SMT film acts as a salicide block layer when forming the silicide layer.