The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 2025
Filed:
May. 14, 2021
Tokyo Electron Limited, Tokyo, JP;
Blaze Messer, Albany, NY (US);
Andrew Metz, Albany, NY (US);
Tokyo Electron Limited, Toyko, JP;
Abstract
In certain embodiments, a method for processing a semiconductor substrate includes receiving a semiconductor substrate that includes a nitride etch stop layer aligned to a gate electrode and a metal-based etch stop layer aligned to a source/drain contact region. The method further includes selectively etching the metal-based etch stop layer, to remove the metal-based etch stop layer and expose a surface of the source/drain contact region, by exposing the semiconductor substrate to a plasma formed in a gas comprising a corrosive material and fluorocarbon.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile