The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 07, 2025

Filed:

Jan. 12, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Hsin-Yuan Lee, Hsinchu, TW;

Chih-Min Hsiao, Taoyuan, TW;

Chien-Wen Lai, Hsinchu, TW;

Shih-Ming Chang, Hsinchu County, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/308 (2006.01); H01L 21/311 (2006.01); H01L 21/762 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3086 (2013.01); H01L 21/31116 (2013.01); H01L 21/31122 (2013.01); H01L 21/76224 (2013.01);
Abstract

The present disclosure provides a method of manufacturing a semiconductor structure. The method includes providing a substrate; depositing a mask layer over the substrate; forming a mandrel pattern over the mask layer; forming a spacer pattern around the mandrel pattern; removing the mandrel pattern; and applying at least one directional etching operation along a first direction to etch two opposing ends of the spacer pattern and form a first spacer feature and a second spacer feature apart from each other.


Find Patent Forward Citations

Loading…