The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 07, 2025

Filed:

Sep. 27, 2022
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Fangfang Zhu, San Jose, CA (US);

Ying Yu Tai, Mountain View, CA (US);

Ning Chen, San Jose, CA (US);

Jiangli Zhu, San Jose, CA (US);

Alex Tang, Cupertino, CA (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 12/00 (2006.01); G06F 3/06 (2006.01); G06F 13/00 (2006.01);
U.S. Cl.
CPC ...
G06F 3/0616 (2013.01); G06F 3/0647 (2013.01); G06F 3/0673 (2013.01);
Abstract

Embodiments include methods, systems, devices, instructions, and media for limiting hot-cold swap wear leveling in memory devices. In one embodiment, wear metric values are stored and monitored using multiple wear leveling criteria. The multiple wear leveling criteria include a hot-cold swap wear leveling criteria, which may make use of a write count offset value. Based on a first wear metric value of a first management group and a second wear metric value of a second management group, the first management group and the second management group are selected for a wear leveling swap operation. The wear leveling swap operation is performed with a whole management group read operation of the first management group to read a set of data, and a whole management group write operation to write the set of data to the second management group.


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