The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 2025
Filed:
Feb. 25, 2022
Asml Netherlands B.v., Veldhoven, NL;
Chunguang Xia, San Diego, CA (US);
Jonghoon Baek, Saratoga, CA (US);
John Tom Stewart, IV, Escondido, CA (US);
Andrew David LaForge, Poway, CA (US);
Deniz Van Heijnsbergen, San Diego, CA (US);
David Robert Evans, Poway, CA (US);
Nina Vladimirovna Dziomkina, San Diego, CA (US);
Yue Ma, Escondido, CA (US);
ASML Netherlands B.V., Veldhoven, NL;
Abstract
In some general aspects, a surface of a structure within a chamber of an extreme ultraviolet (EUV) light source is cleaned using a method. The method includes generating a plasma state of a material that is present at a location adjacent to a non-electrically conductive body that is within the chamber. The generation of the plasma state of the material includes electromagnetically inducing an electric current at the location adjacent the non-electrically conductive body to thereby transform the material that is adjacent the non-electrically conductive body from a first state into the plasma state. The plasma state of the material includes plasma particles, at least some of which are free radicals of the material. The method also includes enabling the plasma particles to pass over the structure surface to remove debris from the structure surface without removing the structure from the chamber of the EUV light source.