The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 2025
Filed:
Aug. 30, 2021
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/32 (2006.01); G03F 7/11 (2006.01); H01L 21/02 (2006.01); H01L 21/027 (2006.01); G03F 7/30 (2006.01);
U.S. Cl.
CPC ...
G03F 7/325 (2013.01); G03F 7/11 (2013.01); H01L 21/02282 (2013.01); H01L 21/0276 (2013.01); G03F 7/3021 (2013.01);
Abstract
Resist rinse solutions and corresponding lithography techniques are disclosed herein. An example lithography method includes forming a resist layer over a workpiece, exposing the resist layer to radiation, developing the exposed resist layer using a developer that removes an unexposed portion of the exposed resist layer, thereby forming a patterned resist layer, and rinsing the patterned resist layer using a rinse solution. The developer is an organic solution, and the rinse solution includes water.