The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 31, 2024

Filed:

Nov. 17, 2021
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Sheng-Chau Chen, Tainan, TW;

Cheng-Tai Hsiao, Tainan, TW;

Cheng-Yuan Tsai, Chu-Pei, TW;

Hsun-Chung Kuang, Hsinchu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10N 50/80 (2023.01); H10B 61/00 (2023.01); H10N 50/01 (2023.01);
U.S. Cl.
CPC ...
H10N 50/80 (2023.02); H10B 61/00 (2023.02); H10N 50/01 (2023.02);
Abstract

Some embodiments relate to an integrated chip. The integrated chip includes a memory cell over a substrate, where the memory cell comprises a data storage structure. A conductive interconnect is over the data storage structure and comprises a first protrusion adjacent to a first side of the data storage structure, where the first protrusion comprises a flat bottom surface. A spacer structure is disposed on the first side of the data storage structure. The spacer structure directly contacts the flat bottom surface of the first protrusion.


Find Patent Forward Citations

Chen, Sheng-Chau. (2024). Mram mtj with directly coupled top electrode connection (U.S. Patent No. 12185640). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12185640

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