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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12183823 B1

PDFFull Text
Date of Patent:
Dec. 31, 2024

Filed:

Jul. 20, 2022

Fin field-effect transistor with a gate structure having a dielectric protection layer

Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Chun-Neng Lin, Hsinchu County, TW;

Jian-Jou Lian, Tainan, TW;

Ming-Hsi Yeh, Hsinchu, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;

Attorney:

FOLEY & LARDNER LLP

Primary Examiner:

Younes Boulghassoul

Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 21/28 (2006.01); H01L 21/8234 (2006.01); H01L 29/40 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 29/785 (2013.01); H01L 21/28247 (2013.01); H01L 21/823431 (2013.01); H01L 21/823437 (2013.01); H01L 29/401 (2013.01); H01L 29/41791 (2013.01); H01L 29/4236 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01); H01L 29/7834 (2013.01); H01L 21/76819 (2013.01); H01L 29/6656 (2013.01);
Abstract

A semiconductor device includes a semiconductor fin. The semiconductor device includes a gate spacer over the semiconductor fin. A lower portion of the gate spacer surrounds a first region and an upper portion of the gate spacer surrounds a second region. The semiconductor device includes a gate dielectric within the first region. The semiconductor device includes a metal gate within the first region. The semiconductor device includes a dielectric protection layer, in contact with the gate dielectric layer, that includes a first portion within the second region and a second portion lining a top surface of the metal gate.

Find Patent Forward Citations

Lin, Chun-Neng. (2024). Fin field-effect transistor with a gate structure having a dielectric protection layer (U.S. Patent No. 12183823). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12183823

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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