The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 31, 2024
Filed:
May. 28, 2021
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Zhi-Qiang Wu, Hsinchu County, TW;
Kuo-An Liu, Hsinchu, TW;
Chan-Lon Yang, Taipei, TW;
Bharath Kumar Pulicherla, Hsinchu, TW;
Li-Te Lin, Hsinchu, TW;
Chung-Cheng Wu, Hsinchu County, TW;
Gwan-Sin Chang, Hsinchu, TW;
Pinyen Lin, Rochester, NY (US);
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A semiconductor device includes a substrate having a semiconductor fin. A gate structure is over the semiconductor fin, in which the gate structure has a tapered profile and comprises a gate dielectric. A work function metal layer is over the gate dielectric, and a filling metal is over the work function metal layer. A gate spacer is along a sidewall of the gate structure, in which the work function metal layer is in contact with the gate dielectric and a top portion of the gate spacer. An epitaxy structure is over the semiconductor fin.