The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 31, 2024
Filed:
Aug. 10, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Jung-Chien Cheng, Tainan, TW;
Kuo-Cheng Chiang, Hsinchu County, TW;
Shi Ning Ju, Hsinchu, TW;
Guan-Lin Chen, Hsinchu County, TW;
Jia-Chuan You, Taoyuan County, TW;
Chia-Hao Chang, Hsinchu, TW;
Chih-Hao Wang, Hsinchu County, TW;
Kuan-Lun Cheng, Hsin-Chu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A semiconductor device includes a first channel member over a first backside dielectric feature, a first gate structure engaging the first channel member, a second channel member over a second backside dielectric feature, a second gate structure engaging the second channel member, and a first isolation feature includes a first portion laterally between the first and second backside dielectric features and a second portion laterally between the first and second gate structures. The first isolation feature is in physical contact with the first and second gate structures.