The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 31, 2024
Filed:
Oct. 25, 2021
Changxin Memory Technologies, Inc., Hefei, CN;
CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei, CN;
Abstract
A method for forming a capacitor via includes: providing a to-be-processed wafer, the to-be-processed wafer including a substrate and a first dielectric layer and a first mask layer that are sequentially formed on a surface of the substrate; etching the first mask layer according to a compensated first etching parameter, to form a first patterned layer extending in a first etching direction; sequentially forming a second dielectric layer and a second mask layer on a surface of the first patterned layer; etching the second mask layer and the second dielectric layer according to a compensated second etching parameter, to form a second patterned layer extending in a second etching direction; and etching the first dielectric layer with the first patterned layer and the second patterned layer together as a capacitor pattern, to form a capacitor via.