The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 31, 2024
Filed:
Dec. 14, 2021
Tokyo Electron Limited, Tokyo, JP;
Peter Lowell George Ventzek, Austin, TX (US);
Alok Ranjan, Austin, TX (US);
Mitsunori Ohata, Taiwa-cho, JP;
Tokyo Electron Limited, Tokyo, JP;
Abstract
A method of etching a substrate that includes: generating a first plasma from a first gas flowing into a first chamber by applying a first power pulse to a first electrode located in the first chamber over a first time duration; and forming a recess in a substrate located in a second chamber, the forming including: providing radicals from the first chamber into the second chamber; applying a plurality of second power pulses to a second electrode located in the second chamber during a second time duration to generate a second plasma in the second chamber from a second gas flowing into the second chamber, the first chamber being pressurized higher than the second chamber; and applying a plurality of third power pulses to a third electrode located in the second chamber during a third time duration to accelerate ions of the second plasma.