The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 31, 2024
Filed:
May. 27, 2021
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/033 (2006.01); H01L 21/311 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0332 (2013.01); H01L 21/31144 (2013.01); H01L 21/76802 (2013.01); H01L 21/76877 (2013.01);
Abstract
A method includes forming a metal-containing hard mask layer over a dielectric layer, wherein the metal-containing hard mask layer has a Young's modulus greater than about 400 MPa and a tensile stress greater than about 600 MPa, patterning the metal-containing hard mask layer to form an opening in the metal-containing hard mask layer, and etching the dielectric layer using the metal-containing hard mask layer as an etching mask. The opening extends into the dielectric layer. The opening is filled with a conductive material to form a conductive feature. The metal-containing hard mask layer is then removed.