The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 31, 2024

Filed:

Jan. 12, 2023
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Dan Xu, Sunnyvale, CA (US);

Jun Xu, Shanghai, CN;

Erwin E. Yu, San Jose, CA (US);

Paolo Tessariol, Arcore, IT;

Tomoko Ogura Iwasaki, San Jose, CA (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
G11C 13/003 (2013.01); G11C 13/0038 (2013.01);
Abstract

Memory array structures might include a first conductive plate connected to memory cells of a first dummy block of memory cells and to memory cells of a second dummy block of memory cells on opposing sides of a first isolation region; a second conductive plate connected to memory cells of the first dummy block of memory cells and to memory cells of the second dummy block of memory cells on opposing sides of a second isolation region; first and second conductors selectively connected to a first global access line, and connected to the first conductive plate on opposing sides of the first isolation region; third and fourth conductors selectively connected to a second global access line, and connected to the second conductive plate on opposing sides of the second isolation region; and a fifth conductor connected to the third conductor and connected to the second conductor.


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