The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 24, 2024
Filed:
Oct. 16, 2022
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Hai-Dang Trinh, Hsinchu, TW;
Fa-Shen Jiang, Taoyuan, TW;
Hsing-Lien Lin, Hsin-Chu, TW;
Chii-Ming Wu, Taipei, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Abstract
A semiconductor device includes a diffusion barrier structure, a bottom electrode, a top electrode, a switching layer and a capping layer. The bottom electrode is over the diffusion barrier structure. The top electrode is over the bottom electrode. The switching layer is between the bottom electrode and the top electrode, and configured to store data. The capping layer is between the switching layer and the top electrode. The diffusion barrier structure includes a multiple-layer structure. A thermal conductivity of the diffusion barrier structure is greater than approximately 20 W/mK.