The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 24, 2024
Filed:
Jul. 22, 2022
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Kun-Huei Lin, Hsinchu, TW;
Yun-Wei Cheng, Hsinchu, TW;
Chun-Hao Chou, Hsinchu, TW;
Kuo-Cheng Lee, Hsinchu, TW;
Chun-Wei Chia, Hsinchu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); G01R 29/08 (2006.01); H01L 27/02 (2006.01); H01L 29/423 (2006.01); H04N 25/00 (2023.01);
U.S. Cl.
CPC ...
H01L 27/14614 (2013.01); G01R 29/08 (2013.01); H01L 27/0203 (2013.01); H01L 27/14603 (2013.01); H01L 27/14612 (2013.01); H01L 27/14636 (2013.01); H01L 27/14643 (2013.01); H01L 29/4236 (2013.01); H01L 27/14605 (2013.01); H01L 2924/13081 (2013.01); H04N 25/00 (2023.01);
Abstract
A method of detecting electromagnetic radiation includes illuminating a photodiode of a pixel sensor with electromagnetic radiation, using vertical gate structures of a transfer transistor to couple a cathode of the photodiode to an internal node of the pixel sensor, thereby generating an internal node voltage level, and generating an output voltage level of the pixel sensor based on the internal node voltage level.