The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 24, 2024

Filed:

May. 30, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Chia-Chung Chen, Keelung, TW;

Szu-Lin Liu, Hsinchu, TW;

Jaw-Juinn Horng, Hsinchu, TW;

Hui-Zhong Zhuang, Kaohsiung, TW;

Chih-Liang Chen, Hsinchu, TW;

Ya Yun Liu, Jhubei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/082 (2006.01); G01K 7/01 (2006.01); H01L 21/8228 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/66 (2006.01); H01L 29/735 (2006.01);
U.S. Cl.
CPC ...
H01L 27/082 (2013.01); G01K 7/01 (2013.01); H01L 21/8228 (2013.01); H01L 29/0649 (2013.01); H01L 29/0808 (2013.01); H01L 29/1008 (2013.01); H01L 29/6625 (2013.01); H01L 29/735 (2013.01);
Abstract

A semiconductor device includes a bipolar junction transistor (BJT) structure including emitters in a first well having a first conductive type, collectors in respective second wells, the second wells having a second conductive type different from the first conductive type and being spaced apart from each other with the first well therebetween, and bases in the first well and between the emitters and the collectors. The BJT structure includes active regions having different widths that form the emitters, the collectors, and the bases.


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