The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 24, 2024
Filed:
Feb. 08, 2022
3d nano sheet method using 2d material integrated with conductive oxide for high performance devices
Tokyo Electron Limited, Tokyo, JP;
H. Jim Fulford, Albany, NY (US);
Mark I. Gardner, Albany, NY (US);
Partha Mukhopadhyay, Albany, NY (US);
TOKYO ELECTRON LIMITED, Tokyo, JP;
Abstract
Methods for the manufacture of semiconductor devices constructed with two-dimensional (2D) materials and conductive oxides using three-dimensional (3D) nanosheets are disclosed. Aspects can include forming the stack of layers comprising a first layer of a semiconductive-behaving material separated from a base layer by a first layer of a first dielectric material and a first layer of a second dielectric material; a second layer of the semiconductive-behaving material separated from the first layer of the semiconductive-behaving material by a second layer of the second dielectric material; and a second layer of the second dielectric material formed on the second layer of the semiconductive-behaving material. Aspects include forming a metal contact coupled with the semiconductive-behaving material, forming a 2D material on the semiconductive-behaving material, forming a layer of a high-k dielectric material on the 2D material, and forming a gate metal on the high-k dielectric material.