The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 24, 2024
Filed:
Mar. 03, 2022
Applicant:
Plasma-therm Nes Llc, St. Petersburg, FL (US);
Inventors:
Sarpangala Hariharakeshava Hegde, Fremont, CA (US);
Vincent Lee, Fremont, CA (US);
Assignee:
PLASMA-THERM NES LLC, St. Petersburg, FL (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/147 (2006.01); H01J 37/24 (2006.01); H01J 37/32 (2006.01); H01L 21/3065 (2006.01);
U.S. Cl.
CPC ...
H01J 37/1474 (2013.01); H01J 37/243 (2013.01); H01J 37/32715 (2013.01); H01L 21/3065 (2013.01); H01J 2237/20207 (2013.01); H01J 2237/20214 (2013.01); H01J 2237/20228 (2013.01); H01J 2237/3323 (2013.01); H01J 2237/3341 (2013.01);
Abstract
The present disclosure provides a method to adjust asymmetric velocity of a scan in a scanning ion beam deposition or etch process to correct asymmetry of depositing or etching between the inboard side and the outboard side of device structures on a wafer, while maintaining the overall uniformity of the respective deposition or etch across the full wafer.