The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 24, 2024
Filed:
Dec. 13, 2022
Applicant:
Globalfoundries U.s. Inc., Malta, NY (US);
Inventors:
Pirooz Parvarandeh, Los Altos Hills, CA (US);
Venkatesh P. Gopinath, Fremont, CA (US);
Navneet Jain, Milpitas, CA (US);
Bipul C. Paul, Mechanicville, NY (US);
Halid Mulaosmanovic, Dresden, DE;
Assignee:
GlobalFoundries U.S. Inc., Malta, NY (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 11/412 (2006.01); G11C 11/419 (2006.01); H01L 21/28 (2006.01); H10B 10/00 (2023.01);
U.S. Cl.
CPC ...
G11C 11/412 (2013.01); G11C 11/419 (2013.01); H01L 29/40111 (2019.08); H10B 10/12 (2023.02);
Abstract
Structures for a static random access memory bit cell and methods of forming a structure for a static random access memory bit cell. The structure comprises a static random access memory bit cell including a first node and a second node, a first ferroelectric field-effect transistor including a first terminal connected to the first node, and a second ferroelectric field-effect transistor including a second terminal connected to the second node.