The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 24, 2024
Filed:
Sep. 13, 2021
Applicant:
Applied Materials, Inc., Santa Clara, CA (US);
Inventors:
Amrita B. Mullick, Santa Clara, CA (US);
Pramit Manna, Sunnyvale, CA (US);
Abhijit Basu Mallick, Palo Alto, CA (US);
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C 8/10 (2006.01); C23C 8/12 (2006.01); C23C 8/16 (2006.01); C23C 16/06 (2006.01); H01L 21/02 (2006.01); H01L 21/283 (2006.01); H01L 21/3105 (2006.01); H01L 21/762 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
C23C 8/10 (2013.01); C23C 8/12 (2013.01); C23C 8/16 (2013.01); C23C 16/06 (2013.01); H01L 21/02244 (2013.01); H01L 21/02614 (2013.01); H01L 21/283 (2013.01); H01L 21/31051 (2013.01); H01L 21/76227 (2013.01); H01L 21/76888 (2013.01);
Abstract
Methods of processing thin film by oxidation at high pressure are described. The methods are generally performed at pressures greater than 2 bar. The methods can be performed at lower temperatures and have shorter exposure times than similar methods performed at lower pressures. Some methods relate to oxidizing tungsten films to form self-aligned pillars.