The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 24, 2024
Filed:
Sep. 14, 2020
Tokyo Electron Limited, Tokyo, JP;
Zeyuan Ni, Yamanashi, JP;
Taiki Kato, Yamanashi, JP;
Tokyo Electron Limited, Tokyo, JP;
Abstract
A method for manufacturing a semiconductor device including a TiN film. The method comprises: supplying TiClgas to a substrate; purging the TiClgas; supplying NHgas to the substrate; purging the NHgas; and supplying an inhibitor that inhibits adsorption of TiClor NHto the substrate. A plurality of cycles each including the supplying the TiClgas, the purging the TiClgas, the supplying the NHgas, and the purging the NHgas are performed, at least a part of the plurality of cycles includes the supplying the inhibitor, and after the supplying the inhibitor is performed, the supplying the TiClgas or the supplying the NHgas is performed without purging the inhibitor, or, after purging the inhibitor for a shorter time than the purging the TiClgas or the purging the NHgas, the supplying the TiClgas or the supplying the NHgas is performed.