High voltage mosfet device with improved breakdown voltage

Abstract

According to various embodiments, there is provided a MOSFET device. The MOSFET device may include a substrate; a first doped region disposed in the substrate; a second doped region disposed in the substrate, wherein the first doped region and the second doped region are laterally adjacent to each other; a third doped region disposed in the first doped region; a fourth doped region disposed in the second doped region; a gate disposed on the substrate, over the first and second doped regions, and between the third and fourth doped regions; and at least one high resistance region embedded in at least the second doped region, wherein the first doped region has a first conductivity type, wherein the second doped region, the third doped region, and the fourth doped region have a second conductivity type, wherein the first conductivity type and the second conductivity type are different.