The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 17, 2024

Filed:

Aug. 04, 2022
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Chan H. Yoo, Boise, ID (US);

Owen R. Fay, Meridian, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 25/18 (2023.01); H01L 23/00 (2006.01); H01L 25/00 (2006.01); H01L 23/48 (2006.01); H01L 23/522 (2006.01);
U.S. Cl.
CPC ...
H01L 25/18 (2013.01); H01L 24/16 (2013.01); H01L 25/50 (2013.01); H01L 23/481 (2013.01); H01L 23/522 (2013.01); H01L 2224/16145 (2013.01); H01L 2924/1431 (2013.01); H01L 2924/1432 (2013.01); H01L 2924/1436 (2013.01);
Abstract

A semiconductor device assembly that includes first and second semiconductor devices connected directly to a first side of a substrate and a plurality of interconnects connected to a second side of the substrate. The substrate is configured to enable the first and second semiconductor devices to communicate with each other through the substrate. The substrate may be a silicon substrate that includes complementary metal-oxide-semiconductor (CMOS) circuits. The first semiconductor device may be a processing unit and the second semiconductor device may be a memory device, which may be a high bandwidth memory device. A method of making a semiconductor device assembly includes applying CMOS processing to a silicon substrate, forming back end of line (BEOL) layers on a first side of the substrate, attaching a memory device and a processing unit directly to the BEOL layers, and forming a redistribution layer on the second side of the substrate.


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