The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 17, 2024
Filed:
Nov. 29, 2021
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Hiroyuki Matsuura, Iwate, JP;
Jinseok Kim, Yamanashi, JP;
Assignee:
Tokyo Electron Limited, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/00 (2006.01); C23C 16/34 (2006.01); C23C 16/455 (2006.01); C23C 16/52 (2006.01); H01J 37/32 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0228 (2013.01); C23C 16/345 (2013.01); C23C 16/45536 (2013.01); C23C 16/45538 (2013.01); C23C 16/45544 (2013.01); C23C 16/52 (2013.01); H01J 37/32449 (2013.01); H01L 21/0217 (2013.01); H01L 21/02274 (2013.01); H01J 2237/332 (2013.01);
Abstract
A deposition method of depositing a silicon nitride film on a surface of a substrate includes: (a) exposing the substrate to a plasma formed from a nitriding gas containing nitrogen (N) and hydrogen (H); (b) exposing the substrate to a plasma formed from hydrogen (H) gas; (c) exposing the substrate to a plasma formed from a process gas containing a halogen; (d) supplying trisilylamine (TSA) to the substrate; and (e) repeating (a) to (d) in this order.