The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 10, 2024

Filed:

Jun. 21, 2021
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Arvind Kumar, Chappaqua, NY (US);

Joshua M. Rubin, Albany, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10B 61/00 (2023.01); G11C 11/56 (2006.01); H10N 50/80 (2023.01); H10N 50/01 (2023.01);
U.S. Cl.
CPC ...
H10B 61/00 (2023.02); H10B 61/22 (2023.02); H10N 50/80 (2023.02); G11C 11/5607 (2013.01); G11C 2211/5615 (2013.01); H10N 50/01 (2023.02);
Abstract

A memory device includes a semiconductor device on a wafer. The semiconductor device includes a gate structure, a first source/drain region, and a second source/drain region. The gate structure is on the first side of the wafer. The first source/drain region is also on the first side of the wafer, and contacts a first end of the gate structure. The second source/drain region is on the second side of the wafer and extends into the first side to contact a second end of the gate structure. The memory device further includes a memory storage element on the second side of the wafer. The memory storage element contacts the second source/drain region.


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