The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 10, 2024

Filed:

Apr. 21, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Sai-Hooi Yeong, Zhubei, TW;

Chi-On Chui, Hsinchu, TW;

Chien-Ning Yao, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7853 (2013.01); H01L 29/0653 (2013.01); H01L 29/6653 (2013.01); H01L 29/66553 (2013.01); H01L 29/6656 (2013.01); H01L 29/6681 (2013.01); H01L 29/7848 (2013.01); H01L 29/0665 (2013.01); H01L 29/42392 (2013.01);
Abstract

A semiconductor device structure is provided. The semiconductor device structure includes a substrate having a base and a fin over the base. The semiconductor device structure includes a nanostructure over the fin. The semiconductor device structure includes a gate stack wrapping around an upper portion of the fin and the nanostructure. The semiconductor device structure includes an inner spacer between the fin and the nanostructure. The semiconductor device structure includes a film in the inner spacer. A first dielectric constant of the film is lower than a second dielectric constant of the inner spacer. The semiconductor device structure includes a low dielectric constant structure in the film.


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