The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 10, 2024
Filed:
Aug. 27, 2021
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Chi-Wei Wu, Hsinchu, TW;
Hsin-Che Chiang, Taipei, TW;
Chun-Sheng Liang, Changhua County, TW;
Jeng-Ya Yeh, New Taipei, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A semiconductor device includes a silicon substrate and a fin formed above the substrate. The fin provides active regions for two devices, such as gate-all-around transistors. The semiconductor device also includes a fin-insulating structure positioned to electrically isolate the active regions for the two devices. The fin-insulating structure is formed in a trench, with a first portion adjacent the fin and a second portion below the fin and extending into the substrate. The fin-insulating structure includes an oxide liner in the second portion of the trench, but not the first portion. The fin-insulating structure is further filled with an insulating material such as silicon nitride.