The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 10, 2024
Filed:
Dec. 23, 2019
Applied Materials, Inc., Santa Clara, CA (US);
Zhigang Wang, Xi'an, CN;
Jiao Yang, Xi'an, CN;
Heng Wang, Shaanxi, CN;
Alfredo Granados, San Antonio, TX (US);
Jon C. Farr, Tempe, AZ (US);
Ruizhe Ren, Shaanxi, CN;
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
An apparatus and method for etching a material layer with a cyclic etching and deposition process. The method for etching a material layer on a substrate includes: (a) etching at least a portion of a material layer () on a substrate () in an etch chamber () to form an open feature () having a bottom surface () and sidewalls in the material layer (); (b) forming a protection layer () on the sidewalls and the bottom surface () of the open feature () from a protection layer () gas mixture comprising at least one carbon-fluorine containing gas; (c) selectively removing the protection layer () formed on the bottom surface () of the open feature () from a bottom surface () open gas mixture comprising the carbon-fluorine containing gas; and (d) continuingly etching the material layer () from the bottom surface () of the open feature () until a desired depth of the open feature () is reached.