The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 10, 2024

Filed:

Oct. 15, 2020
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Kenichi Oyama, Narisaki, JP;

Shohei Yamauchi, Narisaki, JP;

Kazuya Dobashi, Hillsboro, OR (US);

Akitaka Shimizu, Narisaki, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01); H01L 21/02 (2006.01); H01L 21/3065 (2006.01); C23C 8/24 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32449 (2013.01); H01J 37/32357 (2013.01); H01L 21/02252 (2013.01); H01L 21/0234 (2013.01); H01L 21/3065 (2013.01); C23C 8/24 (2013.01); H01J 2237/334 (2013.01); H01J 2237/3387 (2013.01);
Abstract

The present disclosure appropriately shortens a processing step for processing a substrate in which a silicon layer and a silicon germanium layer are alternatively laminated. The present disclosure provides a substrate processing method of processing the substrate in which the silicon layer and the silicon germanium layer are alternatively laminated, which includes forming an oxide film by selectively modifying a surface layer of an exposed surface of the silicon germanium layer by using a processing gas including fluorine and oxygen and converted into plasma.


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