The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 10, 2024
Filed:
Dec. 28, 2022
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Lichuan Zhao, Wuhan, CN;
YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan, CN;
Abstract
A complementary metal oxide semiconductor (CMOS) circuit of a memory device includes a high-voltage functional circuit and an auxiliary clamping circuit. The high-voltage functional circuit includes at least one MOS transistor. One of a source terminal and a drain terminal of an MOS transistor is coupled to an input high-voltage. The high-voltage functional circuit has an output voltage that, when an enable signal is valid, gradually increases and reaches a maximum value. The auxiliary clamping circuit is arranged between the input high-voltage and the one of the source terminal and the drain terminal of the MOS transistor, and is configured to clamp the voltage input to the one of the source terminal and the drain terminal of the MOS transistor during a rising phase of the output voltage, so that the clamping voltage is smaller than the input high-voltage.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile